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PT495F
PT495F
s Features
1. Epoxy resin package type 2. Compact 3. Intermediate acceptance ( : TYP. 40 ) 4. Long lead pin type MAX. lead length of 51.5 mm acceptable to order
Intermediate Acceptance High Sensitivity Phototransistor
s Outline Dimensions
2-C0.5 3.0 R1.250.1 2.8 1.55 1.15 0.75
(Unit : mm)
1.5
(
)
1.4 2-0.8 (1.7 ) (2-0.6 ) (3.0) ( 18.5 )
4.0
5 . Visible light cut-off type
Visible light cut-off resin (black)
s Applications
1. VCRs 2. Optoelectronic switches
2-0.45
+ 0.15 - 0.05
43.0 1
2-0.4 - 0.05
+ 0.15
(2.54) 2 1 2 2 Collector 1 Emitter 2.8 1
(Note) MAX. lead length of 51.5 mm acceptable to order
s Absolute Maximum Ratings
Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 50 75 - 25 to +85 - 40 to +85 260
(Ta=25C)
Unit V V mA mW C C C
*1 1 For 3 seconds at the position of 1.4 mm from the resin edge
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
PT495F
s Electro-optical Characteristics
Parameter
*2 Collector
(Ta=25C) Symbol Conditions VCE = 2V, EV = 2 lx IC VCE = 10V, E e = 0 ICEO IC = 0.8mA, V CE(sat) Ee = 1mW/cm2 p tr VCE = 2V, I C = 5mA RL = 100 tf MIN. 0.2 TYP. 860 80 70 40 MAX. 0.8 10 -6 1.0 400 350 Unit mA A V nm s
current Dark current saturation voltage
*2 Collector-emitter
Peak sensitivity wavelength Response time Half intensity angle Rise Fall
*2 E v, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
Fig. 1 Collector Power Dissipation vs. Ambient temperature
80
Fig. 2 Dark Current vs. Ambient temperature
10 - 4 5 VCE = 10V 10 - 5 5
Collector power dissipation PC ( mW )
70 60 50 40 30 20 10 0 - 25
(A)
CEO
10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 10 - 11 5 - 25
0
25
50
75 85
100
Dark current I
0
25
50
75
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig. 3 Relative Collector Current vs. Ambient temperature
175 VCE = 2V EV = 2 1x
Fig. 4 Collector Current vs. Irradiance
50 VCE = 2V T a = 25C
Relative collector current (%)
150
125
Collector current I C (mA)
20
10
100
5
75
2
50 - 25
0
25
50
75
100
1
2
5
10 - 1
2
5
1
Ambient temperature Ta (C)
Irradiance E e ( mW/cm 2)
PT495F
Fig. 5 Collector Current vs. Collector-emitter voltage
50 45 T a = 25C 80
Fig. 6 Spectral Sensitivity
100 T a = 25C
Collector current I C (mA)
40 35 30 25 20 15 10 5 0 0 1 PC (MAX.) 0.25mW/cm2 0.2mW/cm
2
Relative sensitivity (%)
5 6 7
Ee = 0.5mW/cm2
60
40
0.15mW/cm2 0.1mW/cm2 2 3 4
20
0 500
600
700
Collector-emitter voltage VCE (V)
Wavelength (nm)
800
900
1000 1100 1200
Fig. 7 Response Time vs. Load Resistance
1000 VCE = 2V IC = 5mA T a = 25C
Test Circuit for Response Time
Response time ( s)
100
tr tf
Output Input
td 10 ts VCC RL
90% Output
td tr ts tf
10%
1
10
Load resistance R L ( )
100
1000
5000
Fig. 8 Radiation Diagram
- 20 - 10 0 100 - 30
( Ta = 25C)
+ 10 + 20
Fig. 9 Collector-emitter Saturation Voltage vs. Irradiance
(V)
2.2 T a = 25C 2.0 1.8 IC = 0.5mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 + 30
CE ( sat )
Relative sensitivity (%)
80
Collector-emitter saturation voltage V
1mA
2mA
3mA
- 40
60
+ 40
- 50 - 60 - 70 - 80 - 90
40
+ 50 + 60
20
+ 70 + 80
Angular displacement
0
+ 90
Irradiance Ee ( mW/cm 2)
q Please refer to the chapter "Precautions for Use". (Page 78 to 93)
5mA

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